Epitaxial growth, structural characterization and exchange bias of non-collinear antiferromagnetic Mn$_{3}$Ir thin films
Abstract
Antiferromagnetic materials are of great interest for spintronics. Here we present a comprehensive study of the growth, structural characterization, and resulting magnetic properties of thin films of the non-collinear antiferromagnet Mn$_{3}$Ir. Using epitaxial engineering on MgO (001) and Al$_{2}$O$_{3}$ (0001) single crystal substrates, we control the growth of cubic ${\gamma}$-Mn$_{3}$Ir in both (001) and (111) crystal orientations, and discuss the optimization of growth conditions to achieve high-quality crystal structures with low surface roughness. Exchange bias is studied in bilayers, with exchange bias fields as large as -29 mT (equivalent to a unidirectional anisotropy constant of 11.5 nJ cm$^{-2}$) measured in Mn$_{3}$Ir (111) / permalloy heterostructures at room temperature. In addition, a distinct dependence of blocking temperature on in-plane crystallographic direction in Mn$_{3}$Ir (001) / Py bilayers is observed. These findings are discussed in the context of chiral antiferromagnetic domain structures, and will inform progress towards topological antiferromagnetic spintronic devices.
- Publication:
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arXiv e-prints
- Pub Date:
- March 2019
- DOI:
- 10.48550/arXiv.1903.05539
- arXiv:
- arXiv:1903.05539
- Bibcode:
- 2019arXiv190305539T
- Keywords:
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- Condensed Matter - Materials Science;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 15 pages, 10 figures