Direct Determination of Band-Gap Renormalization in the Photoexcited Monolayer MoS2
Abstract
A key feature of monolayer semiconductors, such as transition-metal dichalcogenides, is the poorly screened Coulomb potential, which leads to a large exciton binding energy (Eb ) and strong renormalization of the quasiparticle band gap (Eg ) by carriers. The latter has been difficult to determine due to a cancellation in changes of Eb and Eg , resulting in little change in optical transition energy at different carrier densities. Here, we quantify band-gap renormalization in macroscopic single crystal MoS2 monolayers on SiO2 using time and angle-resolved photoemission spectroscopy. At an excitation density above the Mott threshold, Eg decreases by as much as 360 meV. We compare the carrier density-dependent Eg with previous theoretical calculations and show the necessity of knowing both doping and excitation densities in quantifying the band gap.
- Publication:
-
Physical Review Letters
- Pub Date:
- June 2019
- DOI:
- 10.1103/PhysRevLett.122.246803
- arXiv:
- arXiv:1902.07124
- Bibcode:
- 2019PhRvL.122x6803L
- Keywords:
-
- Condensed Matter - Strongly Correlated Electrons;
- Condensed Matter - Materials Science
- E-Print:
- 20 pages