Temperature-driven modification of surface electronic structure on bismuth, a topological border material
Abstract
Single crystalline bismuth is known to have a peculiar electronic structure which is very close to the topological phase transition. The modification of the surface states of Bi depending on the temperature are revealed by angle-resolved photoelectron spectroscopy. At low temperature, the upper branch of the surface state merged into the projected bulk conduction bands around the [ image ] point of the surface Brillouin zone. In contrast, the same branch merged into the projected bulk valence bands at high temperature (400 K). Such behavior could be interpreted as a topological phase transition driven by the temperature, which might be applicable for future spin-thermoelectric devices. We discuss the possible mechanisms to cause such transition, such as the thermal lattice distortion and electron-phonon coupling.
- Publication:
-
Journal of Physics D Applied Physics
- Pub Date:
- June 2019
- DOI:
- 10.1088/1361-6463/ab1515
- arXiv:
- arXiv:1902.06374
- Bibcode:
- 2019JPhD...52y4002O
- Keywords:
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- topological phase transition;
- ARPES;
- bismuth;
- Condensed Matter - Materials Science
- E-Print:
- 15 pages with 6 figures (single column)