Spin filtering in CrI$_3$ tunnel junctions
Abstract
The recently discovered magnetism of two-dimensional (2D) van der Waals crystals have attracted a lot of attention. Among these materials is CrI$_3$ - a magnetic semiconductor exhibiting transitions between antiferromagnetic and ferromagnetic orderings under the influence of an applied magnetic field. Here, using first-principles methods based on density functional theory, we explore spin-dependent transport in tunnel junctions formed of fcc Cu (111) electrodes and a CrI$_3$ tunnel barrier. We find about 100% spin polarization of the tunneling current for a ferromagnetically-ordered four-monolayer CrI$_3$ and tunneling magnetoresistance of about 3,000% associated with a change of magnetic ordering in CrI$_3$. This behavior is understood in terms of the spin and wave-vector dependent evanescent states in CrI$_3$ which control the tunneling conductance. We find a sizable charge transfer from Cu to CrI$_3$ which adds new features to the mechanism of spin-filtering in CrI$_3$-based tunnel junctions. Our results elucidate the mechanisms of spin filtering in CrI3 tunnel junctions and provide important insights for the design of magnetoresistive devices based on 2D magnetic crystals.
- Publication:
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arXiv e-prints
- Pub Date:
- January 2019
- DOI:
- 10.48550/arXiv.1901.05993
- arXiv:
- arXiv:1901.05993
- Bibcode:
- 2019arXiv190105993P
- Keywords:
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- Condensed Matter - Materials Science
- E-Print:
- ACS Appl. Mater. Interfaces, 11, 15781 , 2019