Large and tunable negative refractive index via electromagnetically induced chirality in a semiconductor quantum well nanostructure
Abstract
Large and tunable negative refractive index (NRI) via electromagnetically induced chirality is demonstrated in a semiconductor quantum wells (SQWs) nanostructure by using the reported experimental parameters in J.F. Dynes et al., Phys. Rev. Lett. 94, 157403 (2005). It is found: the large and controllable NRI with alterable frequency regions is obtained when the coupling laser field and the relative phase are modulated, which will increase the flexibility and possibility of implementing NRI in the SQWs nanostructure. The scheme rooted in the experimental results may lead a new avenue to NRI material in solid-state nanostructure.
- Publication:
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Soviet Journal of Experimental and Theoretical Physics Letters
- Pub Date:
- November 2014
- DOI:
- 10.1134/S0021364014180131
- arXiv:
- arXiv:1812.07789
- Bibcode:
- 2014JETPL.100..385Z
- Keywords:
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- Physics - Optics
- E-Print:
- 5 pages, 3 figures