Thickness dependence of electron-electron interactions in topological p -n junctions
Abstract
Electron-electron interactions in topological p -n junctions consisting of vertically stacked topological insulators are investigated. n -type Bi2Te3 and p -type Sb2Te3 of varying relative thicknesses are deposited using molecular beam epitaxy and their electronic properties measured using low-temperature transport. The screening factor is observed to decrease with increasing sample thickness, a finding which is corroborated by semiclassical Boltzmann theory. The number of two-dimensional states determined from electron-electron interactions is larger compared to the number obtained from weak antilocalization, in line with earlier experiments using single layers.
- Publication:
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Physical Review B
- Pub Date:
- March 2019
- DOI:
- 10.1103/PhysRevB.99.125139
- arXiv:
- arXiv:1812.04978
- Bibcode:
- 2019PhRvB..99l5139B
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 38 pages, 5 figures, 1 table