Massless Dirac fermions in III-V semiconductor quantum wells
Abstract
We report on the clear evidence of massless Dirac fermions in two-dimensional system based on III-V semiconductors. Using a gated Hall bar made on a three-layer InAs/GaSb/InAs quantum well, we restore the Landau level fan chart by magnetotransport and unequivocally demonstrate a gapless state in our sample. Measurements of cyclotron resonance at different electron concentrations directly indicate a linear band crossing at the Γ point of the Brillouin zone. Analysis of experimental data within an analytical Dirac-like Hamiltonian allows us not only to determine the velocity (vF=1.8 ×105 m/s) of massless Dirac fermions, but also to demonstrate a significant nonlinear dispersion at high energies.
- Publication:
-
Physical Review B
- Pub Date:
- March 2019
- DOI:
- 10.1103/PhysRevB.99.121405
- arXiv:
- arXiv:1812.02468
- Bibcode:
- 2019PhRvB..99l1405K
- Keywords:
-
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Materials Science
- E-Print:
- Main text and Supplemental Materials, 14 pages, 9 figures