Excitonic complexes in MOCVD-grown InGaAs/GaAs quantum dots emitting at telecom wavelengths

Hereby, we present a comprehensive experimental and theoretical study of the electronic structure and optical properties of excitonic complexes in strain-engineered InGaAs/GaAs quantum dots (QDs) grown by metalorganic chemical vapor deposition and emitting at the 1.3-µm telecommunication window. Single QD properties have been determined experimentally for a number of nanostructures by means of excitation-power-dependent and polarization-resolved microphotoluminescence and further compared with the results of confined states calculations employing the eight-band k.p theory combined with the configuration interaction method. The origin of excitonic complexes has been exemplarily confirmed based on magneto-optical and correlation spectroscopy study. Understanding the influence of structural parameters and compositions (of QDs themselves as well as in the neighboring strain-reducing layer) allows identification of which of them are crucial to control the emission wavelength to achieve the telecommunication spectral range or to affect binding energies of the fundamental excitonic complexes. The obtained results provide deeper knowledge of control and limitations of the investigated structures in terms of good spectral isolation of individual optical transitions and spatial confinement, which are crucial in view of QD applications in single-photon sources of high purity at telecom wavelengths.