Quasi-free-standing monolayer hexagonal boron nitride on Ni
Abstract
The electronic structure of monolayer hexagonal boron nitride grown on Ni by the diffusion and precipitation method was studied by x-ray absorption spectroscopy, emission spectroscopy, x-ray photoelectron spectroscopy and micro-ultraviolet photoemission spectroscopy. No indication of hybridization between h-BN π and Ni 3d orbitals was observed. That is, the monolayer h-BN was found to be in the quasi-free-standing state. These results are in striking contrast to those of previous studies in which h-BN was strongly bound to the Ni surface by the orbital hybridization. The absence of hybridization is attributed to absence of a Ni(111) surface in this study. The lattice-matched Ni(111) surface is considered to be essential to orbital hybridization between h-BN and Ni.
- Publication:
-
Materials Research Express
- Pub Date:
- January 2019
- DOI:
- 10.1088/2053-1591/aae5b4
- arXiv:
- arXiv:1810.08341
- Bibcode:
- 2019MRE.....6a6304S
- Keywords:
-
- x-ray emission spectroscopy;
- x-ray absorption spectroscopy;
- photoemission electron microscopy;
- hexagonal boron nitride;
- diffusion and precipitation method;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- Materials Research Express 6, 061304 (2019)