Effective n -type doping of Mg3Sb2 with group-3 elements
Abstract
The recent discovery of high thermoelectric performance in Mg3Sb2 has been critically enabled by the success in n -type doping of this material, which is achieved under Mg-rich growth conditions, typically with chalcogens (Se and Te) as extrinsic dopants. Using first-principles defect calculations, we previously predicted that higher electron concentrations ( ∼1020cm-3) can be achieved in Mg3Sb2 by doping with La instead of Se or Te [P. Gorai et al., J. Mater. Chem. A 6, 13806 (2018)]. Subsequent experiments [K. Imasato et al., J. Mater. Chem. A 6, 19941 (2018)] showed that free electron concentration in La-doped Mg3Sb2 -xBix indeed exceeds those in the Te-doped material. Herein, we further investigate n -type doping of Mg3Sb2 and predict that, in addition to La, other group-3 elements (Sc and Y) are also effective as n -type dopants; Y is as good as La while Sc slightly less. Overall, we find that doping with any group-3 elements should lead to higher free electron concentrations than doping with chalcogens.
- Publication:
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Journal of Applied Physics
- Pub Date:
- January 2019
- DOI:
- 10.1063/1.5081833
- arXiv:
- arXiv:1810.08321
- Bibcode:
- 2019JAP...125b5105G
- Keywords:
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- Condensed Matter - Materials Science
- E-Print:
- doi:10.1063/1.5081833