Gate defined quantum dot realized in a single crystalline InSb nanosheet
Abstract
A single crystalline InSb nanosheet is an emerging planar semiconductor material with potential applications in electronics, infrared optoelectronics, spintronics, and topological quantum computing. Here, we report on the realization of a quantum dot device from a single crystalline InSb nanosheet grown by molecular-beam epitaxy. The device is fabricated from the nanosheet on a Si/SiO2 substrate, and quantum dot confinement is achieved by the top gate technique. Transport measurements of the device are carried out at a low temperature in a dilution refrigerator. It is found that the measured charge stability diagram is characterized by a series of small Coulomb diamonds at high plunger gate voltages and a series of large Coulomb diamonds at low plunger gate voltages, demonstrating the formation of a gate-tunable quantum dot in the InSb nanosheet. Gate-defined planar InSb quantum dots offer a renewed platform for developing semiconductor-based quantum computation technology.
- Publication:
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Applied Physics Letters
- Pub Date:
- January 2019
- DOI:
- 10.1063/1.5064368
- arXiv:
- arXiv:1810.01952
- Bibcode:
- 2019ApPhL.114b3108X
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 12 pages, 4 figures