Long coherent dynamics of localized excitons in (In,Ga)N/GaN quantum wells
Abstract
We study the coherent dynamics of localized excitons in 100 periods of 2.5-nm-thick (In,Ga)N/GaN quantum wells with 7.5% indium concentration, measured with spectroscopic resolution through two-pulse and three-pulse photon echoes at the temperature of 1.5 K. A long-lived coherent exciton dynamics is observed in the (In,Ga)N quantum wells: When the laser photon energy is tuned across the 43-meV-wide inhomogeneously broadened resonance line, the coherence time T2 varies between 45 and 255 ps, increasing with stronger exciton localization. The corresponding narrow homogeneous linewidths ranging from 5.2 to 29 μ eV as well as the relatively weak exciton-phonon interaction (0.7 μ eV /K ) confirm a strong, quantum-dot-like exciton localization in a static disordered potential inside the (In,Ga)N quantum well layers.
- Publication:
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Physical Review B
- Pub Date:
- November 2018
- DOI:
- 10.1103/PhysRevB.98.195315
- arXiv:
- arXiv:1809.08061
- Bibcode:
- 2018PhRvB..98s5315P
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 4 figs