Quantum Interferometry with a g -Factor-Tunable Spin Qubit
Abstract
We study quantum interference effects of a qubit whose energy levels are continuously modulated. The qubit is formed by an impurity electron spin in a silicon tunneling field-effect transistor, and it is read out by spin blockade in a double-dot configuration. The qubit energy levels are modulated via its gate-voltage-dependent g factors, with either rectangular, sinusoidal, or ramp radio frequency waves. The energy-modulated qubit is probed by the electron spin resonance. Our results demonstrate the potential of spin qubit interferometry implemented in a silicon device and operated at a relatively high temperature.
- Publication:
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Physical Review Letters
- Pub Date:
- May 2019
- DOI:
- 10.1103/PhysRevLett.122.207703
- arXiv:
- arXiv:1809.02326
- Bibcode:
- 2019PhRvL.122t7703O
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics;
- Physics - Atomic Physics;
- Quantum Physics
- E-Print:
- 18 pages with 10 figures, including Supplemental Material