Competing Fractional Quantum Hall and Electron Solid Phases in Graphene
Abstract
We report experimental observation of the reentrant integer quantum Hall effect in graphene, appearing in the N$=$2 Landau level. Similar to high-mobility GaAs/AlGaAs heterostructures, the effect is due to a competition between incompressible fractional quantum Hall states, and electron solid phases. The tunability of graphene allows us to measure the $B$-$T$ phase diagram of the electron-solid phase. The hierarchy of reentrant states suggest spin and valley degrees of freedom play a role in determining the ground state energy. We find that the melting temperature scales with magnetic field, and construct a phase diagram of the electron liquid-solid transition.
- Publication:
-
arXiv e-prints
- Pub Date:
- July 2018
- DOI:
- 10.48550/arXiv.1807.10523
- arXiv:
- arXiv:1807.10523
- Bibcode:
- 2018arXiv180710523C
- Keywords:
-
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- Phys. Rev. Lett. 122, 026802 (2019)