Electronic structure of the neutral silicon-vacancy center in diamond
Abstract
The neutrally charged silicon vacancy in diamond is a promising system for quantum technologies that combines high-efficiency optical spin initialization with long spin lifetimes (T2≈1 ms at 4 K) and up to 90% of optical emission into its 946-nm zero-phonon line. However, the electronic structure of SiV0 is poorly understood, making further exploitation difficult. Performing photoluminescence spectroscopy of SiV0 under uniaxial stress, we find the previous excited electronic structure of a single 1 u 3A state is incorrect, and identify instead a coupled E3u-2 u 3A system, the lower state of which has forbidden optical emission at zero stress and efficiently decreases the total emission of the defect. We propose a solution employing finite strain to define a spin-photon interface scheme using SiV0 .
- Publication:
-
Physical Review B
- Pub Date:
- April 2019
- DOI:
- 10.1103/PhysRevB.99.161112
- arXiv:
- arXiv:1804.09141
- Bibcode:
- 2019PhRvB..99p1112G
- Keywords:
-
- Condensed Matter - Materials Science;
- Quantum Physics
- E-Print:
- Phys. Rev. B 99, 161112 (2019)