Thermoelectric Scanning-Gate Interferometry on a Quantum Point Contact

We introduce a scanning probe technique derived from scanning gate microscopy (SGM) to investigate thermoelectric transport in two-dimensional semiconductor devices. Thermoelectric scanning gate microscopy (TSGM) consists in measuring the thermoelectric voltage induced by a temperature difference across a device while scanning a polarized tip that locally changes the potential landscape. We apply this technique to perform interferometry of the thermoelectric transport in a quantum point contact (QPC). We observe an interference pattern in both SGM and TSGM images, and evidence large differences between the two signals in the low-density regime of the QPC. In particular, a large phase jump appears in the interference fringes recorded by TSGM, which is not visible in the interference fringes recorded by SGM. We discuss this difference of sensitivity using a microscopic model of the experiment, based on the contribution from a resonant level inside or close to the QPC. This work demonstrates that combining scanning gate microscopy with thermoelectric measurements offers new information as compared with SGM alone, and provides direct access to the derivative of the device transmission with respect to energy, both in amplitude and in phase.