Valley-dependent magnetoresistance in two-dimensional semiconductors
Abstract
We show theoretically that two-dimensional direct-gap semiconductors with a valley degree of freedom, including monolayer transition-metal dichalcogenides and gapped bilayer graphene, have a longitudinal magnetoconductivity contribution that is odd in valley and odd in the magnetic field applied perpendicular to the system. Using a quantum kinetic theory we show how this valley-dependent magnetoconductivity arises from the interplay between the momentum-space Berry curvature of Bloch electrons, the presence of a magnetic field, and disorder scattering. We discuss how the effect can be measured experimentally and used as a detector of valley polarization.
- Publication:
-
Physical Review B
- Pub Date:
- May 2018
- DOI:
- 10.1103/PhysRevB.97.201301
- arXiv:
- arXiv:1803.05144
- Bibcode:
- 2018PhRvB..97t1301S
- Keywords:
-
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Materials Science
- E-Print:
- 5 pages, 3 figures + 9 pages, 1 figure