GeVn complexes for silicon-based room-temperature single-atom nanoelectronics
Abstract
We propose germanium-vacancy complexes (GeVn) as a viable ingredient to exploit single-atom quantum effects in silicon devices at room temperature. Our predictions, motivated by the high controllability of the location of the defect via accurate single-atom implantation techniques, are based on ab-initio Density Functional Theory calculations within a parameterfree screened-dependent hybrid functional scheme, suitable to provide reliable bandstructure energies and defect-state wavefunctions. The resulting defect-related excited states, at variance with those arising from conventional dopants such as phosphorous, turn out to be deep enough to ensure device operation up to room temperature and exhibit a far more localized wavefunction.
- Publication:
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Scientific Reports
- Pub Date:
- December 2018
- DOI:
- 10.1038/s41598-018-36441-w
- arXiv:
- arXiv:1803.01493
- Bibcode:
- 2018NatSR...818054A
- Keywords:
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- Physics - Computational Physics;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- Scientific Reports 8, 18054 (2018)