Exploring the energy landscape of resistive switching in antiferromagnetic S r3I r2O7
Abstract
We study the resistive switching triggered by an applied electrical bias in the antiferromagnetic Mott insulator S r3I r2O7 . The switching was previously associated with an electric-field-driven structural transition. Here we use time-resolved measurements to probe the thermal activation behavior of the switching process and acquire information about the energy barrier associated with the transition. We quantify the changes in the energy-barrier height with respect to the applied bias and find a linear decrease of the barrier with increasing bias. Our observations support the potential of antiferromagnetic transition-metal oxides for spintronic applications.
- Publication:
-
Physical Review B
- Pub Date:
- April 2018
- DOI:
- 10.1103/PhysRevB.97.134431
- arXiv:
- arXiv:1802.01923
- Bibcode:
- 2018PhRvB..97m4431W
- Keywords:
-
- Condensed Matter - Materials Science
- E-Print:
- 9 pages, 4 figures