Pure spin current transport in a SiGe alloy

Using four-terminal nonlocal magnetoresistance measurements in lateral spin-valve devices with Si_0.1Ge_0.9, we study pure spin current transport in a degenerate SiGe alloy (n ∼ 5.0 × 10¹⁸ cm^-3). Clear nonlocal spin-valve signals and Hanle effect curves, indicating generation, transport, and detection of pure spin currents, are observed. The spin diffusion length and spin lifetime of the Si_0.1Ge_0.9 layer at low temperatures are reliably estimated to be ∼0.5 µm and ∼0.2 ns, respectively. This study demonstrates the possibility of exploring physics and developing spintronic applications using SiGe alloys.