Tight-binding piezoelectric theory and electromechanical coupling correlations for transition metal dichalcogenide monolayers
Abstract
The lack of inversion symmetry in semiconducting transition metal dichalcogenide monolayers (TMDMs) enables a considerable intrinsic piezoelectricity, which opens prospects for atomically thin piezotronics and optoelectronics. Here, based on the tight-binding (TB) approach and Berry phase expression for electronic polarization difference, we establish an atomic-scale TB theory for demonstrating piezoelectric physics in TMDMs. Using the TB piezoelectric theory, we predict the electronic Grüneisen parameter (EGP), which measures the electron-phonon couplings for TMDMs. By virtue of the constructed analytical piezoelectric model, we further reveal the correlation between the electronic contribution to piezoelectric coefficients and strain-induced pseudomagnetic gauge field (PMF). These predicted EGP and PMF for TMDMs are experimentally testable, and hence the TB piezoelectric model is an alternative theoretical framework for calculating electron-phonon interactions and PMF.
- Publication:
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Physical Review B
- Pub Date:
- September 2018
- DOI:
- 10.1103/PhysRevB.98.125402
- arXiv:
- arXiv:1801.00995
- Bibcode:
- 2018PhRvB..98l5402W
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- Phys. Rev. B 98, 125402 (2018)