Magnetic proximity effect of a topological insulator and a ferromagnet in thin-film bilayers of Bi0.5Sb1.5Te3 and SrRuO3
Abstract
Magnetic proximity effect of a topological insulator in contact with a ferromagnet is reported in thin-film bilayers of 15-nm-thick Bi0.5Sb1.5Te3 on either 15- or 40-nm-thick SrRuO3 on (100) SrTiO3 wafers. SrRuO3 is an itinerant ferromagnet which has long been considered weak, thus any observation of a significant magnetic proximity effect in the present system should help elucidate the mechanism of this magnetism and might be utilized in device applications. Magnetotransport results of the bilayers were compared with those of reference films of 15-nm Bi0.5Sb1.5Te3 and 15- or 40-nm SrRuO3. Comparison of the temperature coefficient of resistance [(1 /R )×d R /d T , which is qualitatively proportional to the magnetization] of the bilayer and reference ferromagnetic film normalized above Tc shows a clear suppression in the bilayer by about 50% just below Tc, indicating a weaker proximity magnetization in the bilayer. Resistance hysteresis loops versus field at 1.85 ±0.05 K in the bilayer and reference films show a clear magnetic proximity effect, where the peak resistance of the bilayer at the coercive field shifts to lower fields by ∼30 % compared to a hypothetical bilayer of two resistors connected in parallel with no interaction between the layers. Narrowing of the coercive peaks of the bilayers as compared to those of the reference ferromagnetic films by 25-35% was also observed, which represents another signature of the magnetic proximity effect.
- Publication:
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Physical Review B
- Pub Date:
- February 2018
- DOI:
- 10.1103/PhysRevB.97.054405
- arXiv:
- arXiv:1711.04275
- Bibcode:
- 2018PhRvB..97e4405K
- Keywords:
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- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- This v2 version is the as published version in Phys. Rev. B, and it includes a new supplement at the end of this file