Thermal detection of single e-h pairs in a biased silicon crystal detector
Abstract
We demonstrate that individual electron-hole pairs are resolved in a 1 cm2 by 4 mm thick silicon crystal (0.93 g) operated at ∼35 mK. One side of the detector is patterned with two quasiparticle-trap-assisted electro-thermal-feedback transition edge sensor arrays held near ground potential. The other side contains a bias grid with 20% coverage. Bias potentials up to ±160 V were used in the work reported here. A fiber optic provides 650 nm (1.9 eV) photons that each produce an electron-hole (e- h+) pair in the crystal near the grid. The energy of the drifting charges is measured with a phonon sensor noise σ ∼0.09 e- h+ pair. The observed charge quantization is nearly identical for h+s or e-s transported across the crystal.
- Publication:
-
Applied Physics Letters
- Pub Date:
- January 2018
- DOI:
- 10.1063/1.5010699
- arXiv:
- arXiv:1710.09335
- Bibcode:
- 2018ApPhL.112d3501R
- Keywords:
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- Physics - Instrumentation and Detectors
- E-Print:
- 4 journal pages, 5 figures