Scavenging of oxygen vacancies at modulation-doped oxide interfaces: Evidence from oxygen isotope tracing
Abstract
The introduction of manganite buffer layers, L a7 /8S r1 /8Mn O3 (LSMO) in particular, at the metallic interface between SrTi O3 (STO) and another band insulator suppresses the carrier density of the interfacial two-dimensional electron gas (2DEG) and improves significantly the electron mobility. However, the mechanisms underlying the extreme mobility enhancement remain elusive. Herein, we used 18O isotope exchanged SrT i18O3 as substrates to create 2DEG at room temperature with and without the LSMO buffer layer. By mapping the oxygen profile across the interface between ST O18 and disordered LaAl O3 or yttria-stabilized zirconia (YSZ), we provide unambiguous evidence that redox reactions occur at oxide interfaces even grown at room temperature. Moreover, the manganite buffer layer not only suppresses the carrier density but also strongly suppresses the oxygen exchange dynamics of the STO substrate, which likely prevents the reduction of STO during the formation of the 2DEG. The underlying mechanism on the enhanced electron mobility at buffered oxide interfaces is also discussed.
- Publication:
-
Physical Review Materials
- Pub Date:
- October 2017
- DOI:
- 10.1103/PhysRevMaterials.1.052002
- arXiv:
- arXiv:1710.08118
- Bibcode:
- 2017PhRvM...1e2002C
- Keywords:
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- Condensed Matter - Materials Science
- E-Print:
- to be apprear in PRMater, 2017