Giant self-induced transparency of intense few-cycle terahertz pulses in n-doped silicon
Abstract
The results of high-field terahertz transmission experiments on n-doped silicon (carrier concentration of $8.7\times10^{16}$ cm$^{-3}$) are presented. We use terahertz pulses with electric field strengths up to 3.1 MV cm$^{-1}$ and a pulse duration of 700 fs. Huge transmittance enhancement of $\sim$90 times is observed with increasing of the terahertz electric field strengths within the range of 1.5--3.1 MV cm$^{-1}$.
- Publication:
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Optics Letters
- Pub Date:
- December 2017
- DOI:
- 10.1364/OL.42.004889
- arXiv:
- arXiv:1710.03583
- Bibcode:
- 2017OptL...42.4889C
- Keywords:
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- Physics - Optics
- E-Print:
- doi:10.1364/OL.42.004889