Mn2VAl Heusler alloy thin films: appearance of antiferromagnetism and exchange bias in a layered structure with Fe

Mn₂VAl Heusler alloy films were epitaxially grown on MgO(1 0 0) single-crystal substrates by ultra-high-vacuum magnetron sputtering. A2- and L2₁-type Mn₂VAl order was controlled by the deposition temperature. A2-type Mn₂VAl films showed no spontaneous magnetization, while L2₁-type Mn₂VAl films showed ferrimagnetic behaviour with a maximum saturation magnetization of 220 emu cm^-3 at room temperature (RT). An antiferromagnetic reflection was observed with neutron diffraction at RT for an A2-type Mn₂VAl film deposited at 400 °C. A bilayer sample of the antiferromagnetic A2-type Mn₂VAl and Fe showed an exchange bias of 120 Oe at 10 K.