Quantum lifetime in ultrahigh quality GaAs quantum wells: Relationship to Δ5 /2 and impact of density fluctuations

We consider the quantum lifetime derived from low-field Shubnikov-de Haas oscillations as a metric of the quality of the two-dimensional electron gas in GaAs quantum wells that expresses large excitation gaps of the ν =5/2 fractional quantum Hall state in the N =1 Landau level. In high quality samples, small density inhomogeneities dramatically impact the amplitude of Shubnikov-de Haas oscillations such that the canonical method [cf. Coleridge, Phys. Rev. B 44, 3793 (1991), 10.1103/PhysRevB.44.3793] for determination of the quantum lifetime substantially underestimates τ_q unless density inhomogeneity is explicitly considered. We have developed a method that can be used to determine density inhomogeneity and extract the intrinsic τ_q by analyzing the Shubnikov-de Haas oscillations. However, even after accounting for inhomogeneity, τ_q does not correlate well with sample quality as measured by Δ_{5 /2}, the excitation gap of the fractional quantum Hall state at 5/2 filling.