Analysis of a Sputtered Si Surface for Ar Sputter Gas Supply Purity Monitoring
Abstract
For sputter depth profiling often sample erosion by Ar+ ions is used. Only a high purity of the sputter gas and a low contamination level of the ion gun avoids misleading depth profile measurements results. Here a new measurement procedure is presented, which monitors these parameters. A Si sample is sputtered inside the instrument and then the surface concentration of the elements Ar, C, N and O is measured. Results of such measurements of an XPS microprobe PHI Quantum 2000, which were recorded over a period of 10 years, are presented.
- Publication:
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arXiv e-prints
- Pub Date:
- April 2017
- DOI:
- 10.48550/arXiv.1704.03051
- arXiv:
- arXiv:1704.03051
- Bibcode:
- 2017arXiv170403051S
- Keywords:
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- Physics - Instrumentation and Detectors
- E-Print:
- 5 pages, 3 figures