Narrow-band anisotropic electronic structure of ReS2
Abstract
We have used angle-resolved photoemission spectroscopy to investigate the band structure of ReS2, a transition-metal dichalcogenide semiconductor with a distorted 1T crystal structure. We find a large number of narrow valence bands, which we attribute to the combined influence of structural distortion and spin-orbit coupling. We further show how this leads to a strong in-plane anisotropy of the electronic structure, with quasi-one-dimensional bands reflecting predominant hopping along zigzag Re chains. We find that this does not persist up to the top of the valence band, where a more three-dimensional character is recovered with the fundamental band gap located away from the Brillouin zone center along kz. These experiments are in good agreement with our density-functional theory calculations, shedding light on the bulk electronic structure of ReS2, and how it can be expected to evolve when thinned to a single layer.
- Publication:
-
Physical Review B
- Pub Date:
- August 2017
- DOI:
- 10.1103/PhysRevB.96.085205
- arXiv:
- arXiv:1703.04725
- Bibcode:
- 2017PhRvB..96h5205B
- Keywords:
-
- Condensed Matter - Materials Science
- E-Print:
- Phys. Rev. B 96, 085205 (2017)