Characterization of traps at nitrided SiO2/SiC interfaces near the conduction band edge by using Hall effect measurements

The effects of nitridation on the density of traps at SiO₂/SiC interfaces near the conduction band edge were qualitatively examined using a simple, newly developed characterization method that utilizes Hall effect measurements and split capacitance-voltage measurements. The results showed a significant reduction in the density of interface traps near the conduction band edge as a result of nitridation, but the interface traps were not completely eliminated by nitridation.