Improved self-energy correction method for accurate and efficient band structure calculation
Abstract
The LDA-1/2 method for self-energy correction is a powerful tool for calculating accurate band structures of semiconductors, while keeping the computational load as low as standard LDA. Nevertheless, controversies remain regarding the arbitrariness of choice between (1/2)e and (1/4)e charge stripping from the atoms in group IV semiconductors, the incorrect direct band gap predicted for Ge, and inaccurate band structures for III-V semiconductors. Here we propose an improved method named shell-LDA-1/2 (shLDA-1/2 for short), which is based on a shell-like trimming function for the self-energy potential. With the new approach, we obtained accurate band structures for group IV, and for III-V and II-VI compound semiconductors. In particular, we reproduced the complete band structure of Ge in good agreement with experimental data. Moreover, we have defined clear rules for choosing when (1/2)e or (1/4)e charge ought to be stripped in covalent semiconductors, and for identifying materials for which shLDA-1/2 is expected to fail.
- Publication:
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arXiv e-prints
- Pub Date:
- January 2017
- DOI:
- 10.48550/arXiv.1701.02650
- arXiv:
- arXiv:1701.02650
- Bibcode:
- 2017arXiv170102650X
- Keywords:
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- Physics - Computational Physics;
- Condensed Matter - Materials Science
- E-Print:
- 15 pages, 4 figures, 1 table