Pressuring the low-temperature orthorhombic phase with a non-trivial topological state of Ru2Sn3 to room temperature
Abstract
We report high-pressure studies of the structural stability of Ru2Sn3, a new type of three-dimensional topological insulator (3D-TI) with unique quasi-one-dimensional Dirac electron states throughout the surface Brillouin zone of its one-atmosphere low-temperature orthorhombic form. Our in-situ high-pressure synchrotron x-ray diffraction and electrical resistance measurements reveal that upon increasing pressure the tetragonal-to-orthorhombic phase shifts to higher temperature. We find that the stability of the orthorhombic phase that hosts the non-trivial topological ground state can be pushed up to room temperature by an applied pressure of ∼ 20 GPa. This is in contrast with the commonly known 3D-TIs whose ground state is usually destroyed under pressure. Our results indicate that pressure provides a possible pathway for realizing a room temperature topological insulating state in Ru2Sn3.
- Publication:
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EPL (Europhysics Letters)
- Pub Date:
- February 2017
- DOI:
- 10.1209/0295-5075/117/46001
- arXiv:
- arXiv:1612.05385
- Bibcode:
- 2017EL....11746001Z
- Keywords:
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- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- 12 pages and 4 figures