Characterization of Novel Thin N-in-P Planar Pixel Modules for the ATLAS Inner Tracker Upgrade
Abstract
The ATLAS experiment will undergo a major upgrade of the tracker system in view of the high luminosity phase of the LHC (HL-LHC) to start operation in 2026. The most severe challenges are to be faced by the innermost layers of the pixel detector which will have to withstand a radiation fluence of up to $1.4\times10^{16}\,$n$_\text{eq}$/cm$^{2}$. Thin planar pixel modules are promising candidates to instrument these layers, thanks to the small material budget and their high charge collection efficiency after irradiation. Sensors of $100-200\,\mu$m thickness, interconnected to FE-I4 read-out chips, are characterized with radioactive sources as well as testbeams at the CERN-SPS and DESY. The performance of sensors irradiated up to a fluence of $5\times 10^{15}\,$n$_\text{eq}$/cm$^{2}$ is compared in terms of charge collection and hit efficiency. Highly segmented sensors are a challenge for the tracking in the forward region of the pixel system at the HL-LHC. To reproduce the performance of $50$x$50\,\mu$m$^2$ pixels at high pseudo-rapidities, FE-I4 compatible planar pixel sensors are studied before and after irradiation in beam tests at high incidence angle ($80^\circ$) with respect to the short pixel direction. Results on cluster shape and hit efficiency will be shown.
- Publication:
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arXiv e-prints
- Pub Date:
- December 2016
- DOI:
- 10.48550/arXiv.1612.01281
- arXiv:
- arXiv:1612.01281
- Bibcode:
- 2016arXiv161201281B
- Keywords:
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- Physics - Instrumentation and Detectors;
- High Energy Physics - Experiment
- E-Print:
- 5 pages, 12 figures, presented at IEEE NSS 2016