Deterministic patterned growth of high-mobility large-crystal graphene: a path towards wafer scale integration
Abstract
We demonstrate rapid deterministic (seeded) growth of large single-crystals of graphene by chemical vapour deposition (CVD) utilising pre-patterned copper substrates with chromium nucleation sites. Arrays of graphene single-crystals as large as several hundred microns are grown with a periodicity of up to 1 mm. The graphene is transferred to target substrates using aligned and contamination- free semi-dry transfer. The high quality of the synthesised graphene is confirmed by Raman spectroscopy and transport measurements, demonstrating room-temperature carrier mobility of 21 000 cm2 V-1 s-1 when transferred on top of hexagonal boron nitride. By tailoring the nucleation of large single-crystals according to the desired device geometry, it will be possible to produce complex device architectures based on single-crystal graphene, thus paving the way to the adoption of CVD graphene in wafer-scale fabrication.
- Publication:
-
2D Materials
- Pub Date:
- June 2017
- DOI:
- 10.1088/2053-1583/aa5481
- arXiv:
- arXiv:1611.00923
- Bibcode:
- 2017TDM.....4b1004M
- Keywords:
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- Condensed Matter - Materials Science
- E-Print:
- 6 pages