Fano stability diagram of a symmetric triple quantum dot
Abstract
The Fano factor stability diagram of a C3 v symmetric triangular quantum dot is analyzed for increasing electron fillings N . At low filling, conventional Poissonian and sub-Poissonian behavior is found. At larger filling, N ≥2 , a breaking of the electron-hole symmetry is manifested in super-Poissonian noise with a peculiar bias voltage dependence of the Fano factor at Coulomb and interference blockade. An analysis of the Fano map unravels a nontrivial electron-bunching mechanism arising from the presence of degenerate many-body states combined with orbital interference and Coulomb interactions. An expression for the associated dark states is provided for generic N .
- Publication:
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Physical Review B
- Pub Date:
- March 2017
- DOI:
- 10.1103/PhysRevB.95.115133
- arXiv:
- arXiv:1610.08447
- Bibcode:
- 2017PhRvB..95k5133N
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- Phys. Rev. B 95, 115133 (2017)