Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor
Abstract
Spin-based logic devices could operate at a very high speed with a very low energy consumption and hold significant promise for quantum information processing and metrology. We develop a spintronic device simulator by combining an in-house developed, experimentally verified, ensemble self-consistent Monte Carlo device simulator with spin transport based on a Bloch equation model and a spin-orbit interaction Hamiltonian accounting for Dresselhaus and Rashba couplings. It is employed to simulate a spin field effect transistor operating under externally applied voltages on a gate and a drain. In particular, we simulate electron spin transport in a 25 nm gate length In0.7Ga0.3As metal-oxide-semiconductor field-effect transistor with a CMOS compatible architecture. We observe a non-uniform decay of the net magnetization between the source and the gate and a magnetization recovery effect due to spin refocusing induced by a high electric field between the gate and the drain. We demonstrate a coherent control of the polarization vector of the drain current via the source-drain and gate voltages, and show that the magnetization of the drain current can be increased twofold by the strain induced into the channel.
- Publication:
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Journal of Applied Physics
- Pub Date:
- December 2017
- DOI:
- 10.1063/1.4994148
- arXiv:
- arXiv:1610.04114
- Bibcode:
- 2017JAP...122v3903T
- Keywords:
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- Physics - Computational Physics;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 16 pages, 18 figures