Voltage Controlled Memristor Threshold Logic Gates
Abstract
In this paper, we present a resistive switching memristor cell for implementing universal logic gates. The cell has a weighted control input whose resistance is set based on a control signal that generalizes the operational regime from NAND to NOR functionality. We further show how threshold logic in the voltage-controlled resistive cell can be used to implement a XOR logic. Building on the same principle we implement a half adder and a 4-bit CLA (Carry Look-ahead Adder) and show that in comparison with CMOS-only logic, the proposed system shows significant improvements in terms of device area, power dissipation and leakage power.
- Publication:
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arXiv e-prints
- Pub Date:
- September 2016
- DOI:
- 10.48550/arXiv.1609.04919
- arXiv:
- arXiv:1609.04919
- Bibcode:
- 2016arXiv160904919M
- Keywords:
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- Computer Science - Emerging Technologies
- E-Print:
- To appear in 2016 IEEEE Asia Pacific Conference on Circuits &