A Noninvasive Method for Nanoscale Electrostatic Gating of Pristine Materials
Abstract
Electrostatic gating is essential for defining and control of semiconducting devices. However, nano-fabrication processes required for depositing gates inevitably degrade the pristine quality of the material of interest. Examples of materials that suffer from such degradation include ultra-high mobility GaAs/AlGaAs two-dimensional electron gases (2DEGs), graphene, topological insulators, and nanowires. To preserve the pristine material properties, we have developed a flip-chip setup where gates are separated from the material by a vacuum, which allows nanoscale electrostatic gating of the material without exposing it to invasive nano-processing. An additional benefit is the vacuum between gates and material, which, unlike gate dielectrics, is free from charge traps. We demonstrate the operation and feasibility of the flip-chip setup by achieving quantum interference at integer quantum Hall states in a Fabry-Pérot interferometer based on a GaAs/AlGaAs 2DEG. Our results pave the way for the study of exotic phenomena including fragile fractional quantum Hall states by preserving the high quality of the material.
- Publication:
-
Nano Letters
- Pub Date:
- October 2015
- DOI:
- 10.1021/acs.nanolett.5b02800
- arXiv:
- arXiv:1608.05476
- Bibcode:
- 2015NanoL..15.6883B
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 25 pages including Supporting Information