Theory of Landau level mixing in heavily graded graphene p -n junctions

We demonstrate the use of a quantum transport model to study heavily graded graphene p -n junctions in the quantum Hall regime. A combination of p -n interface roughness and delta function disorder potential allows us to compare experimental results on different devices from the literature. We find that wide p -n junctions suppress mixing of n ≠0 Landau levels. Our simulations spatially resolve carrier transport in the device, revealing separation of higher order Landau levels in strongly graded junctions, which suppresses mixing.