Smearing of the quantum anomalous Hall effect due to statistical fluctuations of magnetic dopants
Abstract
The quantum anomalous Hall effect is induced by substitution of a certain portion x of Bi atoms in a BiTe-based insulating parent compound by magnetic ions (Cr or V). We find the density of in-gap states N (E ) emerging as a result of statistical fluctuations of the composition x in the vicinity of the transition point where the average gap E¯g passes through zero. A local gap follows the fluctuations of x . Using the instanton approach, we show that, near the gap edges, the tails are exponential lnN (E ) ∝-(E¯g-|E |) and the tail states are due to small local gap reduction. Our main finding is that, even when the smearing magnitude exceeds the gap width, there exists a semihard gap around zero energy, where lnN (E ) ∝-E/¯g|E | ln(E/¯g|E | ) . The states responsible for N (E ) originate from local gap reversals within narrow rings. The consequence of the semihard gap is the Arrhenius, rather than variable-range hopping, temperature dependence of the diagonal conductivity at low temperatures.
- Publication:
-
Physical Review B
- Pub Date:
- October 2016
- DOI:
- 10.1103/PhysRevB.94.155313
- arXiv:
- arXiv:1606.05821
- Bibcode:
- 2016PhRvB..94o5313Y
- Keywords:
-
- Condensed Matter - Disordered Systems and Neural Networks;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 7 pages, 2 figures