The effects of cap layer thickness on the performance of InGaN/GaN MQW solar cell
Abstract
Following letter introduces a theoretical approach to investigate the effect of two-step GaN barrier layer growth methodology on the performance of InGaN/GaN MQW solar cell, in which a lower temperature GaN cap layer was grown on top of each quantum well followed by a higher temperature GaN barrier layer. Different growth conditions would cause changes in the concentration of trap level density of states and imperfection sites. The simulation and comparison of 3 samples each with different cap layer thickness, reveals the fact that increasing cap layer thickness results in higher quantum efficiency, improved short circuit density of current and 3.2% increase of the fill factor.
- Publication:
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arXiv e-prints
- Pub Date:
- May 2016
- DOI:
- 10.48550/arXiv.1605.06816
- arXiv:
- arXiv:1605.06816
- Bibcode:
- 2016arXiv160506816H
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 8 pages, 3 figures, 2 tables