Resistive Switching Characteristics of Al/Si3N4/p-Si MIS-Based Resistive Switching Memory Devices
Abstract
In this study, we proposed and demonstrated a self-rectifying property of silicon nitride (Si3N4)-based resistive random access memory device by employing p-type silicon (p-Si) as bottom electrode. The RRAM devices consisted of Al/Si3N4/p-Si are fabricated by a low presure chemical vapor deposition and exhibited an intrinsic diode property with non-linear current-voltage (I-V) behavior. In addition, compared to conventional metal/insulator/metal (MIM) structure of Al/Si3N4/Ti RRAM cells, operating current in whole bias regions for proposed metal/insulator/semiconductor (MIS) cells has been dramatically lowered because introduced p-Si bottom electrode efficiently suppresses the current in both low and high resistive states. As a result, the results mean that by employing p-Si as bottom electrode the Si3N4-based RRAM cells can be applied to selector-free RRAM cells.
- Publication:
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arXiv e-prints
- Pub Date:
- May 2016
- DOI:
- 10.48550/arXiv.1605.06006
- arXiv:
- arXiv:1605.06006
- Bibcode:
- 2016arXiv160506006Y
- Keywords:
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- Condensed Matter - Materials Science