Spin-induced anomalous magnetoresistance at the (100) surface of hydrogen-terminated diamond
Abstract
We report magnetoresistance measurements of hydrogen-terminated (100)-oriented diamond surfaces wherein an ionic-liquid-gated field-effect-transistor technique was used to make hole carriers accumulate. Unexpectedly, the observed magnetoresistance is positive within the range of 2 <T <10 K and -7 <B <7 T, in striking contrast to the negative magnetoresistance previously detected for similar devices with (111)-oriented diamond surfaces. Furthermore, we find that (1) the magnetoresistance is orders of magnitude larger than that of the classical orbital magnetoresistance; (2) the magnetoresistance is nearly independent of the direction of the applied magnetic field; and (3) for the in-plane field, the magnetoresistance ratio, defined as [ρ (B )-ρ (0 )]/ρ (0 ) , follows a universal function of B /T . These results indicate that the spin degree of freedom of hole carriers plays an important role in the surface conductivity of hydrogen-terminated (100) diamond.
- Publication:
-
Physical Review B
- Pub Date:
- October 2016
- DOI:
- 10.1103/PhysRevB.94.161301
- arXiv:
- arXiv:1605.05035
- Bibcode:
- 2016PhRvB..94p1301T
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 5 pages, 5 figures