Decoupling Edge Versus Bulk Conductance in the Trivial Regime of an InAs /GaSb Double Quantum Well Using Corbino Ring Geometry
Abstract
A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs /GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically predicted topological system with a temperature-insensitive linear resistivity per unit length in the range of 2 k Ω /μ m . A resistor network model of the device is developed to decouple the edge conductance from the bulk conductance, providing a quantitative technique to further investigate the nature of this trivial edge conductance, conclusively identified here as being of n type.
- Publication:
-
Physical Review Letters
- Pub Date:
- August 2016
- DOI:
- 10.1103/PhysRevLett.117.077701
- arXiv:
- arXiv:1605.04818
- Bibcode:
- 2016PhRvL.117g7701N
- Keywords:
-
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- Phys. Rev. Lett. 117, 077701 (2016)