Uniaxially stressed germanium with fundamental direct band gap
Abstract
We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that enhance a biaxial strain of 0.16% up to 3.6% uniaxial tensile strain. Cooling the bridges to 20 K increases the uniaxial strain up to a maximum of 5.4%. Temperature-dependent photoluminescence reveals the crossover to a fundamental direct band gap to occur between 4.0% and 4.5%. Our data are in good agreement with new theoretical computations that predict a strong bowing of the band parameters with strain.
- Publication:
-
arXiv e-prints
- Pub Date:
- December 2015
- DOI:
- 10.48550/arXiv.1603.03454
- arXiv:
- arXiv:1603.03454
- Bibcode:
- 2016arXiv160303454G
- Keywords:
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- Condensed Matter - Materials Science;
- Physics - Optics
- E-Print:
- 9 pages, 8 figures