Electric dipole spin resonance in systems with a valley-dependent g factor
Abstract
In this theoretical study we qualitatively and quantitatively investigate the electric dipole spin resonance (EDSR) in a single Si/SiGe quantum dot in the presence of a magnetic field gradient, e.g., produced by a ferromagnet. We model a situation in which the control of electron spin states is achieved by applying an oscillatory electric field, inducing real-space oscillations of the electron inside the quantum dot. One of the goals of our study is to present a microscopic theory of valley-dependent g factors in Si/SiGe quantum dots and investigate how valley relaxation combined with a valley-dependent g factor leads to a novel electron spin dephasing mechanism. Furthermore, we discuss the interplay of spin and valley relaxations in Si/SiGe quantum dots. Our findings suggest that the electron spin dephases due to valley relaxation, and are in agreement with recent experimental studies [Nat. Nanotechnol. 9, 666 (2014), 10.1038/nnano.2014.153].
- Publication:
-
Physical Review B
- Pub Date:
- May 2016
- DOI:
- 10.1103/PhysRevB.93.205433
- arXiv:
- arXiv:1603.02829
- Bibcode:
- 2016PhRvB..93t5433R
- Keywords:
-
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 9 pages, 9 figures