Near-forward Raman selection rules for the phonon-polariton in (Zn, Be)Se alloys
Abstract
The Raman selection rules of the (Zn-Se, Be-Se)-mixed phonon-polariton ( P P ) created by "alloying" in the three-mode [1 × (Zn-Se), 2 × (Be-Se)] Zn1-xBexSe system, whose dramatic S-like dispersion (∼200 cm-1) covers the large frequency gap between the Zn-Se and Be-Se spectral ranges, are studied in its wave vector ( q ) dependence by near-forward Raman scattering. Both the "collapse" regime away from the Γ point (q = 0) and the "reinforcement" regime near Γ are addressed, using appropriate laser lines and Be contents. We find that in both regimes the considered P P , in fact a transverse mode with the mixed mechanical-electrical character, obeys the same nominal Raman selection rules as its purely mechanical variant observed in the standard backscattering geometry. The discussion is supported by contour modeling of the multi- P P Raman lineshapes in their q -dependence within the linear dielectric approach.
- Publication:
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Journal of Applied Physics
- Pub Date:
- November 2016
- DOI:
- 10.1063/1.4967315
- arXiv:
- arXiv:1603.00616
- Bibcode:
- 2016JAP...120r5702D
- Keywords:
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- Condensed Matter - Materials Science
- E-Print:
- 16 pages, 7 figures