Nonequilibrium optical properties in semiconductors from first principles: A combined theoretical and experimental study of bulk silicon
Abstract
The calculation of the equilibrium optical properties of bulk silicon by using the Bethe-Salpeter equation solved in the Kohn-Sham basis represents a cornerstone in the development of an ab-initio approach to the optical and electronic properties of materials. Nevertheless, calculations of the transient optical spectrum using the same efficient and successful scheme are scarce. We report, here, a joint theoretical and experimental study of the transient reflectivity spectrum of bulk silicon. Femtosecond transient reflectivity is compared to a parameter-free calculation based on the nonequilibrium Bethe-Salpeter equation. By providing an accurate description of the experimental results we disclose the different phenomena that determine the transient optical response of a semiconductor. We give a parameter-free interpretation of concepts such as bleaching, photoinduced absorption, and stimulated emission, beyond the Fermi golden rule. We also introduce the concept of optical gap renormalization, as a generalization of the known mechanism of band gap renormalization. The present scheme successfully describes the case of bulk silicon, showing its universality and accuracy.
- Publication:
-
Physical Review B
- Pub Date:
- May 2016
- DOI:
- 10.1103/PhysRevB.93.195205
- arXiv:
- arXiv:1603.00225
- Bibcode:
- 2016PhRvB..93s5205S
- Keywords:
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- Physics - Optics;
- Condensed Matter - Materials Science
- E-Print:
- 14 pages, 13 figures