Electronic evidence of temperature-induced Lifshitz transition and topological nature in ZrTe5
Abstract
The topological materials have attracted much attention for their unique electronic structure and peculiar physical properties. ZrTe5 has host a long-standing puzzle on its anomalous transport properties manifested by its unusual resistivity peak and the reversal of the charge carrier type. It is also predicted that single-layer ZrTe5 is a two-dimensional topological insulator and there is possibly a topological phase transition in bulk ZrTe5. Here we report high-resolution laser-based angle-resolved photoemission measurements on the electronic structure and its detailed temperature evolution of ZrTe5. Our results provide direct electronic evidence on the temperature-induced Lifshitz transition, which gives a natural understanding on underlying origin of the resistivity anomaly in ZrTe5. In addition, we observe one-dimensional-like electronic features from the edges of the cracked ZrTe5 samples. Our observations indicate that ZrTe5 is a weak topological insulator and it exhibits a tendency to become a strong topological insulator when the layer distance is reduced.
- Publication:
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Nature Communications
- Pub Date:
- May 2017
- DOI:
- 10.1038/ncomms15512
- arXiv:
- arXiv:1602.03576
- Bibcode:
- 2017NatCo...815512Z
- Keywords:
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- Condensed Matter - Materials Science;
- Condensed Matter - Strongly Correlated Electrons;
- Condensed Matter - Superconductivity
- E-Print:
- 22 Pages, 4 Figures