Resonance-enhanced waveguide-coupled silicon-germanium detector
Abstract
A photodiode with 0.55 ± 0.1 A/W responsivity at a wavelength of 1176.9 nm has been fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant waveguide photodetector exploits carrier generation in silicon-germanium within a microring which is compatible with high-performance electronics. A 3 dB bandwidth of 5 GHz at -4 V bias is obtained with a dark current of less than 20 pA.
- Publication:
-
Applied Physics Letters
- Pub Date:
- February 2016
- DOI:
- 10.1063/1.4941995
- arXiv:
- arXiv:1601.00542
- Bibcode:
- 2016ApPhL.108g1105A
- Keywords:
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- Physics - Optics
- E-Print:
- 8 pages, 3 figures